pin names a0 - a19 address dq0 - dq15 data in/data out ce0, ce1 low chip enables we write enable oe output enable wp write protect rp reset/power down byte byte enable ry/by ready/busy v dd power supply (+3.3v) v ss ground n.c. no connect description: the dp3z4mx16pmty5 / d p3z4mx16pmby5 is a 64 megabit 3.3 volt only cmos flash eeprom (electrically in-system programmable and erasable rom memory) stack. these stacks are constrcted of four 1m x 16 flash eeprom?s that are configured as a 4m x 16. the module features high speed access times with common data inputs and putputs. the flash devices used in this module also features bgo (blank ground operations). this feature allows program or erase operations to be performed on one bank of the deice while a read operation is performed on the other bank. features: organizations available: 4m x 16 fast read access times: 80ns (v dd =3.3 + 0.3v) 90ns (v dd 2.7~3.6v) industrial temperature: -40 o c to + 85 o c low power: 70 ma maximum active (16 bit mode) 20 a maxinum standby (cmos) 100k program / erase sysles 3.3 volt only in-system programming package: 56-pin tsop stack 30a243-04 rev. b 5/02 this document contains information on a product presently under development at dpac technologies corp. dpac reserves the right to change products or specifications herein without prior notice. 64 megabit 3.3 volt cmos flash eeprom dp3z4mx16pmty5 / dp3z4mx16pmby5 preliminary dm cas we dq0-dq3 cs0 ras ck dqs cs1 ck a0-a11 vref cke1 cke0 ba0-ba1 *qfc (8 meg x 4 bits x 4 banks) 128 mb ddr sdram (8 meg x 4 bits x 4 banks) 1 pin-out diagram functional block diagram advanced components packaging 1 2 3 4 13 14 15 16 24 23 22 21 20 19 43 42 41 40 39 38 37 36 35 34 33 32 31 29 30 44 48 49 50 51 52 53 54 a8 a10 a12 a15 vss n.c. dq11 a13 dq2 dq3 vdd dq12 dq13 dq14 dq15/a-1 a4 a3 a2 a1 a0 n.c. n.c. n.c. n.c. ce3 ce2 ce1 ce0 vss dq8 a6 a5 a7 a18 ry/by wp we a9 a11 (top view) 10 9 12 11 6 5 8 7 a19 a17 55 47 56 dq10 dq1 dq0 28 25 26 27 a16 n.c. rp dq6 dq5 n.c. dq4 byte dq9 46 a14 18 oe 45 dq7 17
56 pin tsop stack dp y5 90 - speed memory prefix 3z 4m x 16 m package memory desig memory type memory module without support logic depth width desig p mitsubishi flash 3.3 volt flash eeprom bout x bottom boot block 16 megabit based 90ns grade ci ci -40c to 85c @ industrial temp. commercial processed b t top boot block ordering information 30a243-04 rev. b 5/01 2 top view side view bottom view end view .020 [.51] .050 [1.27] typ. (.125 [3.18]) (.075 [1.91]) .045 (56x) .205 [5.21] max. 1.000.012 .700.010 [25.4.30] [17.28.25] .020 [.51] [1.14] dpac technologies products & services for the integration age 7321 lincoln way, garden grove, ca 92841 te l 714 898 0007 fax 714 897 1772 www.dpactech.com nasdaq: dpac ?2002 dpac technologies, all rights reserved. dpac technologies?, memory stack?, system stack?, cs stack?, lp-stack? are tradem arks of dpac technologies corp. dp3z4mx16pmty5 / dp3z4mx16pmby5 64 megabit 3.3 volt cmos flash eeprom preliminary mechanical drawing
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